SEMICONDUCTOR DEVICE WITH FLOATING LAYER MERGED GUARD RING AND METHOD FOR MANUFACTURING THE SAME

摘要

The present invention is to provide a semiconductor device and its manufacturing method capable of preventing the bunker occurs in a region other than when the cell area dip-out process while preventing the cleaning between the storage node neighboring during dip-out process of the present invention method of manufacturing a semiconductor device includes: forming a separation membrane on the cell region and the semiconductor substrate defined peripheral circuit region; Etching the membrane edge of the cell region to form a guard ring pattern; It comprising embedded in the guard ring pattern on the membrane film serving as a floating guard ring; Comprising the steps of selectively etching the film and the floating separator in the cell region to form a plurality of storage nodes pattern; Forming a storage node within the storage node pattern; And a dip-out and removing all of the membrane of the cell area process through the present invention is a peripheral circuit region when dip-out process By film floating formed to fill the inside of the guard ring pattern surrounding the cell area, the floating membrane because it is protected by having a significant effect in terms of ensuring improved margins and bunkers. ; A capacitor, a guard ring, the peripheral circuit area, bunkers, cell area, rich film