The method for forming gate oxide film using contorl of Hf-oxide film thickness and gate electrode using the same

摘要

PURPOSE: A gate oxide film formation method which utilizes a thickness control process of a hafnium oxide film which has high dielectric constant and a gate electrode using the same are provided to reduce the equivalent oxide film thickness of an oxide film by easily eliminating an interfacial layer between a semiconductor substrate and an oxide film. CONSTITUTION: A semiconductor substrate is comprised of an indium-phosphide compound. An oxide film which is comprised of a hafnium oxide material is deposited on the semiconductor substrate. The thickness of the hafnium oxide film is controlled within a range from 5.5nm to 11nm. The interfacial stress between the oxide film and the semiconductor substrate is 0.095 to 0.55 percent.