首页>
外国专利>
THE METHOD FOR FORMING GATE OXIDE FILM USING CONTORL OF HF-OXIDE FILM THICKNESS AND GATE ELECTRODE USING THE SAME
THE METHOD FOR FORMING GATE OXIDE FILM USING CONTORL OF HF-OXIDE FILM THICKNESS AND GATE ELECTRODE USING THE SAME
展开▼
机译:利用HF氧化膜厚度和栅极电极的控制来形成氧化膜的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
PURPOSE: A gate oxide film formation method which utilizes a thickness control process of a hafnium oxide film which has high dielectric constant and a gate electrode using the same are provided to reduce the equivalent oxide film thickness of an oxide film by easily eliminating an interfacial layer between a semiconductor substrate and an oxide film. CONSTITUTION: A semiconductor substrate is comprised of an indium-phosphide compound. An oxide film which is comprised of a hafnium oxide material is deposited on the semiconductor substrate. The thickness of the hafnium oxide film is controlled within a range from 5.5nm to 11nm. The interfacial stress between the oxide film and the semiconductor substrate is 0.095 to 0.55 percent.
展开▼