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3D VERTICAL TYPE MEMORY CELL STRING WITH SHIELD ELECTRODE, MEMORY ARRAY USING THE SAME AND FABRICATION METHOD THEREOF
3D VERTICAL TYPE MEMORY CELL STRING WITH SHIELD ELECTRODE, MEMORY ARRAY USING THE SAME AND FABRICATION METHOD THEREOF
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机译:带屏蔽电极的3D垂直型记忆细胞系,使用其的记忆阵列及其制造方法
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摘要
PURPOSE: A three dimensional vertical memory cell string with a shield electrode, a memory array using the same, and a manufacturing method thereof are provided to improve integration by reducing the width of a trench between adjacent cell stacks. CONSTITUTION: Electrode stacks are formed by filling a selectively etched sacrificial semiconductor layer with an insulation layer. A gate insulation layer stack including a charge storage layer(3) is formed on each trench. A semiconductor body(5) is formed on the gate insulation layer stack. A separation insulation layer(6) is formed on each trench and surrounds the semiconductor body. A shield electrode(27) is formed on the separation insulation layer of each trench by depositing conductive materials on the semiconductor substrate and etching the semiconductor substrate.
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