3D VERTICAL MEMORY CELL STRING WITH A WEIGHTING ELECTRODE TO INCREASE MEMORY CAPACITY, A MEMORY ARRAY USING THE SAME, AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A 3D vertical memory cell string with a weighting electrode, a memory array including the same, and a manufacturing method thereof are provided to remove interference between bodies by including a weighting control electrode, a tunneling insulation layer, and the weighting electrode between adjacent cell stacks sharing the body.;CONSTITUTION: Two or more electrode stacks(40) are formed on a semiconductor substrate(1). A semiconductor body(5) is formed on a gate insulation layer stack. A first separation insulation layer(6) is formed between a weighting electrode(27) and the semiconductor body. A second separation insulation layer(28) electrically separates each weighting electrode in each trench direction. A tunneling insulation layer(29) is formed on each weighting electrode.;COPYRIGHT KIPO 2013