PROCESS FOR METALLIC CONTAMINATION REDUCTION IN SILICON WAFERS

摘要

process for removing a contaminant selected from copper, nickel, and a combination thereof from a silicon wafer having a surface and an inner as, by creating an oxidation environment around the silicon wafer surface to initiate the flow of the atmosphere containing oxygen in the oxidation start temperature or the step of cooling the silicon wafer in a controlled atmosphere from the top of the temperature and the oxidation initiation temperature, a silicon wafer to form an oxide layer on the surface and forming a transformation layer in the interface between the oxide layer and the silicon wafer interior. Step of cooling the wafer, and also to control their diffusion of atoms of the contaminant from the interior of the silicon wafer with the strained layer. Thereafter, the silicon wafer cleaning to remove the contaminants diffuse into the modified layer by removing the oxide layer and the strain layer.