Investigation of metallic contamination analysis using vapor phasedecomposition – droplet collection – total reflection X-ray fluorescence(VPD-DC-TXRF) for Pt-group elements on silicon wafers

摘要

Since the nineties non-Si based materials are introduced at an accelerated pace in the research anddevelopment for advanced micro-electronic devices or micro electric mechanical systems (MEMS).Several of the materials contain elements from the Pt-group with e.g. metal gates (Ru, Pt, Ir, Ir02),ferro-electric materials (Pt, Ir, Ir02), seed layers for interconnects (Pd) and MEMS (Pt, Ru, Ru02,Rh, Pd, Os). The controlled introduction of these materials in clean room environments requires theavailability of efficient detection methods such as VPD-DC-TXRF. The Pt-group elements howeverexhibit electropositive reduction potentials with respect to Si wafers and a more problematiccollection of these metals is expected, similar to the well-known case of Cu contamination [1]. Inthis paper, we investigate the feasibility of a VPD-DC-TXRF method for Pt-group elements incomparison with Cu.