首页> 外国专利> The apparatus to passivate superconducting metal circuit on a MEMS device in wet chemical etching and the wet chemical etching using the apparatus

The apparatus to passivate superconducting metal circuit on a MEMS device in wet chemical etching and the wet chemical etching using the apparatus

机译:在湿法化学蚀刻和使用该装置的湿法化学蚀刻中钝化MEMS器件上的超导金属电路的装置

摘要

PURPOSE: A cross section wet etching apparatus and method for protecting a superconducting metal circuit surface during the manufacture of a MEMS device using wet etching are provided to prevent damage to a superconductive metal of a MEMS substrate when depositing SiN on the MEMS substrate and to prevent direct exposure of a superconductive metal circuit on the MEMS device to an etching liquid. CONSTITUTION: A cross section wet etching apparatus for protecting a superconducting metal circuit surface comprises an etching protection plate(100) which is deposited with SiN or Si3N4 films on both sides thereof, a MEMS substrate(200) which is attached to one side of the etching protection plate to manufacture a device with a superconductive metal circuit, a first jig(300) which is attached to the other side of the MEMS substrate, and a second jig(400) which is coupled with the first jig by a fastening unit(310).
机译:目的:提供一种横截面湿蚀刻设备和方法,用于在使用湿蚀刻的MEMS器件的制造过程中保护超导金属电路表面,以防止在MEMS衬底上沉积SiN时对MEMS衬底的超导金属的损坏并防止将MEMS器件上的超导金属电路直接暴露于蚀刻液中。构成:一种用于保护超导金属电路表面的截面湿法刻蚀设备,包括刻蚀保护板(100)和MEMS基板(200),该刻蚀保护板(100)的两侧均沉积有SiN或Si3N4膜。蚀刻保护板以制造具有超导金属电路的设备,附接到MEMS基板另一侧的第一夹具(300)和通过紧固单元与第一夹具耦合的第二夹具(400) 310)。

著录项

  • 公开/公告号KR101169723B1

    专利类型

  • 公开/公告日2012-08-03

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20100102701

  • 申请日2010-10-21

  • 分类号C23F1/08;C23F1/24;C23F1/02;C23F17;

  • 国家 KR

  • 入库时间 2022-08-21 17:07:44

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