MONOLITHIC VERTICAL JUNCTION FIELD EFFECT TRANSISTOR AND SCHOTTKY BARRIER DIODE FABRICATED FROM SILICON CARBIDE AND METHOD FOR FABRICATING THE SAME

摘要

etch- self with the injection gate- aligned vertical junction field-effect transistors and integrated anti-parallel Schottky barrier a switching device that combines a diode is disclosed. The anode of the diode is connected to the source of the transistor at the device level in order to reduce the loss caused by the stray inductance . SiC surface in the SBD anode region is controlled through the dry etching so as to achieve a low Schottky barrier height to reduce the power loss associated with turn-on voltage of the SBD.