METHODS FOR REMOVING BLACK SILICON AND BLACK SILICON CARBIDE FROM SURFACES OF SILICON AND SILICON CARBIDE ELECTRODES FOR PLASMA PROCESSING APPARATUSES

摘要

plasma processing chamber of a plasma- exposed surface of the upper electrode from the black silicon or black silicon carbide, the removal method It is provided. The method includes the steps of removing , plasma black silicon or black silicon carbide from the surface using a plasma using the gas to form a composition containing a fluorine -containing gas . The method may also remove the black silicon or black silicon carbide from the surface of the component in the chamber other than the top electrode .