Setting a threshold voltage for complex transistors by diffusion of a metal species in the gate dielectric in front of the gate structure

摘要

A method with:Forming a gate dielectric material (210) via a first active region (202a) and a second active region (202b) of a semiconductor component (202);Forming a first diffusion layer (221) with a first metal species selectively via the first active region (202a);Forming a second diffusion layer (226) with a second metal species by means of the second active region (202b);Performing a heat treatment, in order to provide a diffusion of the first metal species from the first diffusion layer (221) with the first metal species in the gate dielectric material (210) via the first active region (202a) and in order to initiate a diffusion of the second metal species of the second diffusion layer (226) with the second metal species in the gate dielectric material (210) via the second active region (202b) to initiate;Removal of the first diffusion layer (221) with the first metal species and the second diffusion layer (226) with the second metal species, so that the gate dielectric material (210) over the first and second active region (202a, 202b) is exposed.;..