Method for manufacturing piezoresistive sensor arrangement of inertial sensor e.g. rotation rate sensor, involves forming remaining strips of electrical insulating layer between strip guard and bar

摘要

The method involves providing a precursor (18) with an electrical insulating layer e.g. dielectric sheet, of a semiconductor substrate (20) i.e. silicon substrate. Two openings are formed on the insulating layer. The openings are arranged in portions of an endowed region (22). Regions (28, 30) of the precursor are separated from a remaining arm. A bar of the arm is formed of an endowed material between the portions in the endowed region of a strip guard. Remaining strips of the layer are formed between the strip guard and the bar. An independent claim is also included for a piezoresistive sensor arrangement for an inertial sensor, comprising a base part.