Semiconductor component having a bildmos - or soi - bildmos - transistor, as well as cascode circuit

摘要

Semiconductor component (200), comprising a bipolar transistor (bi1, bi2) and a monolithically integrated in a substrate and to the bipolar transistor is arranged directly adjacent to - ldmos transistor (ldmos1, ldmos2), which has a source region (s), which at the same time a part of a collector region (c) of the bipolar transistor, and subsequently forms as a combined area (205, c / s) is designated.