首页> 外国专利> Component useful as a circuit breaker for an inverter, comprises a MOSFET having a gate terminal and a source terminal, a first diode for measuring a junction temperature of the MOSFET, and a second diode and/or a third diode

Component useful as a circuit breaker for an inverter, comprises a MOSFET having a gate terminal and a source terminal, a first diode for measuring a junction temperature of the MOSFET, and a second diode and/or a third diode

机译:用作逆变器的断路器的组件包括:具有栅极端子和源极端子的MOSFET,用于测量MOSFET的结温的第一二极管以及第二二极管和/或第三二极管

摘要

The component comprises a MOSFET (311) having a gate terminal (309) and a source terminal (305), a first diode (304) for measuring a junction temperature of the MOSFET, and a second diode and/or a third diode and/or a fourth diode and/or diodes connected in series. The first diode includes an anode terminal and a cathode terminal, and is in thermal contact with a barrier layer of the MOSFET and designed as a silicon diode, a suppressor diode, a Schottky diode, a PIN diode or a zener diode. The MOSFET is of an N-channel type, where the gate terminal is connected to the cathode terminal. The component comprises a MOSFET (311) having a gate terminal (309) and a source terminal (305), a first diode (304) for measuring a junction temperature of the MOSFET, and a second diode and/or a third diode and/or a fourth diode and/or diodes connected in series. The first diode includes an anode terminal and a cathode terminal, and is in thermal contact with a barrier layer of the MOSFET and designed as a silicon diode, a suppressor diode, a Schottky diode, a PIN diode or a zener diode. The MOSFET is of an N-channel type, where the gate terminal is connected to the cathode terminal and the source terminal is connected to the anode terminal or the MOSFET is of a P-channel type, where the gate terminal is connected to the anode terminal and the source terminal is connected to the cathode terminal. Independent claims are included for: (1) a power steering for a motor vehicle; (2) a steering system; and (3) a method for junction temperature measurement.
机译:该组件包括具有栅极端子(309)和源极端子(305)的MOSFET(311),用于测量MOSFET结温的第一二极管(304),第二二极管和/或第三二极管和/或串联连接的第四二极管和/或多个二极管。第一二极管包括阳极端子和阴极端子,并且与MOSFET的势垒层热接触并且被设计为硅二极管,抑制器二极管,肖特基二极管,PIN二极管或齐纳二极管。 MOSFET是N沟道类型的MOSFET,其栅极端子连接到阴极端子。该组件包括具有栅极端子(309)和源极端子(305)的MOSFET(311),用于测量MOSFET结温的第一二极管(304),第二二极管和/或第三二极管和/或串联连接的第四二极管和/或多个二极管。第一二极管包括阳极端子和阴极端子,并且与MOSFET的势垒层热接触并且被设计为硅二极管,抑制器二极管,肖特基二极管,PIN二极管或齐纳二极管。 MOSFET是N沟道型的,其中栅极端子连接到阴极端子,而源极端子连接到阳极端子,或者MOSFET是P沟道型的,其中栅极端子连接到阳极。端子和源极端子连接到阴极端子。包括以下方面的独立权利要求:(1)机动车辆的动力转向; (2)转向系统; (3)结温测量方法。

著录项

  • 公开/公告号DE102011050122A1

    专利类型

  • 公开/公告日2012-06-21

    原文格式PDF

  • 申请/专利权人 ZF LENKSYSTEME GMBH;

    申请/专利号DE20111050122

  • 发明设计人 OROU CHRISTOPH;WALZ STEFAN;

    申请日2011-05-05

  • 分类号H01L23/62;H01L29/78;B62D5/04;G01K7/01;

  • 国家 DE

  • 入库时间 2022-08-21 17:04:54

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