Power semiconductor component for use as e.g. low-side switch, has diode with anode and cathode terminals, which are connected with source, drain and gate terminals of field effect transistor by diffusion solder connection

摘要

A component has a chip formed as a power metal-oxide-semiconductor field effect transistor (MOSFET) (18) with source, drain and gate terminals. Another chip is formed as a diode (19) with anode and cathode terminals, where the chips are arranged upon each other in a housing. The anode and cathode terminals of the diode are electrically connected with the source and drain terminals of the MOSFET. The terminals of the diode and MOSFET are connected to one another by a diffusion solder connection. INDEPENDENT CLAIM are also included for the following: (1) an illumination switch including a power semiconductor component; (2) a switch for a heating unit including a power semiconductor component; (3) an electronic switch including a power semiconductor component; and (4) the production of a power semiconductor switch.