METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT ON THE FORMATION OF LINES AND SLICES

摘要

The invention relates to a method for etching a target layer, comprising the steps of: depositing a hard mask layer (HM) on a target layer (TL) and on the hard mask layer, a first photosensitive layer, exposing the first photosensitive layer through a first mask for transferring first patterns into the photosensitive layer, transferring the first patterns into the hard mask layer, depositing on the hard mask layer a second photosensitive layer (PR '), exposing the second photosensitive layer through a second mask for transferring second patterns into the second photosensitive layer, transferring the second patterns into the hard mask layer by etching the layer, and transferring the first and second patterns into the target layer at the second layer; through the hard mask, the second patterns forming lines (L1, L2, L3), and the first patterns (R1, R2) forming trenches intersecting the lines in the hard mask.