PRODUCTION METHOD FOR NITRIDE SEMICONDUCTOR CRYSTAL OF GROUP 13 METAL OF PERIODIC TABLE, AND NITRIDE SEMICONDUCTOR CRYSTAL OF GROUP 13 METAL OF PERIODIC TABLE OBTAINED BY THE PRODUCTION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a nitride semiconductor crystal in which the warpage amount of crystal axis in the plane is suppressed.;SOLUTION: A nitride semiconductor crystal of a group 13 metal of the periodic table is grown so that a growth surface has a facet structure, and then the nitride semiconductor crystal of the group 13 metal of the periodic table is grown so as to bury the facet structure by setting the partial pressure of nitrogen gas to 6.5×10⁴ Pa or more. In the growth process, after growing the nitride semiconductor crystal of the group 13 metal of the periodic table so that the growth surface has the facet structure, the nitride semiconductor crystal of the group 13 metal of the periodic table may be grown so as to continuously bury the facet structure.;COPYRIGHT: (C)2014,JPO&INPIT