首页> 外文期刊>Journal of nanoscience and nanotechnology >Noble Metal Nanocrystals at the Surface of Nitride Semiconductors: Synthesis, Deposition and Surface Characterization
【24h】

Noble Metal Nanocrystals at the Surface of Nitride Semiconductors: Synthesis, Deposition and Surface Characterization

机译:氮化物半导体表面的贵金属纳米晶体:合成,沉积和表面表征

获取原文
获取原文并翻译 | 示例
           

摘要

Currently an extensive range of noble metal colloidal nanocrystals (NCs) can be readily produced by diverse chemical methods. These nanomaterials present novel physical properties and can be regarded as building blocks to the nanofabrication of smaller, energy efficient and faster devices. Moreover, when these NCs are deposited on the surface of luminescent semiconductors, as it is the case of GaN-based heterostructures, exciton coupling with the metal plasmons may occur. In this work we report on the deposition of noble metal NC at the surface of InGaN/GaN multiple quantum wells (MQW), with efficient light emission in the visible range. We investigate the surface organization of Ag and Au NCs with sizes ranging from 5-30 nm as a function of deposition conditions. Scanning Electron Microscopy and Atomic Force Microscopy clearly showed that the metallic nanoparticles were successfully incorporated within the MQWs of the nitride semiconductors.
机译:当前,可以通过各种化学方法容易地生产各种各样的贵金属胶体纳米晶体(NC)。这些纳米材料具有新颖的物理性能,可以被视为制造更小,更节能,更快速的设备的基础。而且,当这些NC沉积在发光半导体的表面上时,如基于GaN的异质结构的情况,可能发生与金属等离子体激元的激子耦合。在这项工作中,我们报告了InGaN / GaN多量子阱(MQW)表面上贵金属NC的沉积,并在可见光范围内有效发光。我们研究Ag和Au NCs的表面组织,其范围为5-30 nm,这取决于沉积条件。扫描电子显微镜和原子力显微镜清楚地表明,金属纳米颗粒已成功地掺入氮化物半导体的MQW中。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号