METHOD FOR PREPARING P-TYPE ZnO, AND ZnO ELECTROLUMINESCENT SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method for preparing p-type ZnO which has been conventionally considered to be difficult to be prepared.;SOLUTION: An n-layer 11 comprising an n-type ZnO substrate and pseudo p-layers 12 obtained by implanting nitrogen as a p-type dopant into the n-type ZnO substrate are formed, diffusion current is generated in the n-layer 11 and the pseud p-layers 12 by applying a forward bias voltage, a dopant distribution of the nitrogen implanted into one or more pseud p-layers 12 is repeatedly changed on the basis of Joule heat caused by the generated diffusion current, an inverted distribution is caused in a conduction band and a valence band in an active layer by the forward bias voltage, the diffusion current is reduced by allowing electrons in the conductive band forming the inverted distribution to perform induced emission in a plurality of stages on the basis of a non-adiabatic process, at a place where near field light is caused on the basis of the nitride dopant distribution after changed, so that the Joule heat is lowered, and thereby the dopant distribution of the nitride in the pseud p-layers 12 is fixed and the pseud p-layers 12 form p-type ZnO.;COPYRIGHT: (C)2013,JPO&INPIT