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THIN FILM LIGHT EMISSION DIODE BY NANOSCALE LATERAL EPITAXIAL GROWTH, AND METHOD OF MANUFACTURING THE SAME
THIN FILM LIGHT EMISSION DIODE BY NANOSCALE LATERAL EPITAXIAL GROWTH, AND METHOD OF MANUFACTURING THE SAME
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机译:纳米尺度横向外延生长的薄膜发光二极管及其制造方法
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摘要
PROBLEM TO BE SOLVED: To provide a thin film light emission diode by nanoscale lateral epitaxial growth that is advantageous in that a lamination defect in a semiconductor structure and a decrease in dislocation density are suppressed by a lateral epitaxial growth method, and is enhanced in crystal quality of a light emission layer, reduced in leakage current, and also increased in external quantum efficiency by forming a rough structure on a semiconductor structure surface; and a method of manufacturing the same.SOLUTION: The thin film light emission diode by nanoscale lateral epitaxial growth includes: a substrate; a bonding metal layer located on the substrate; a first electrode located on the bonding metal layer; the semiconductor structure located on the first electrode and formed by lateral epitaxial growth; and a second electrode located on the semiconductor structure, the semiconductor structure including the second electrode forming a nanoscale rough structure on an upper surface which is not lidded with the second electrode.
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