Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO_2 nanorod-array patterned sapphire template

摘要

High efficiency GaN-based light-emitting diodes (LEDs) are demonstrated by a nanoscale epitaxial lateral overgrowth (NELO) method on a SiO_2 nanorod-array patterned sapphire substrate (NAPSS). The transmission electron microscopy images suggest that the voids between SiO_2 nanorods and the stacking faults introduced during the NELO of GaN can effectively suppress the threading dislocation density. The output power and external quantum efficiency of the fabricated LED were enhanced by 52% and 56%, respectively, compared to those of a conventional LED. The improvements originated from both the enhanced light extraction assisted by the NAPSS and the reduced dislocation densities using the NELO method.