首页> 外国专利> HEAT SINK, METHOD OF MANUFACTURING HEAT SINK, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE

HEAT SINK, METHOD OF MANUFACTURING HEAT SINK, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE

机译:热沉,制造热沉的方法,半导体器件和半导体模块

摘要

PROBLEM TO BE SOLVED: To provide a heat sink which enables a metal/diamond complex to present heat conductivity close to its original heat conductivity.;SOLUTION: A heat sink 11 includes a mounting plane 11a for mounting a device thereon and comprises a metal region 15 which is provided on a principal surface 13a of a base 13. The principal surface 13a includes projections 23a-23c formed from diamond particles 17 and recesses 25a-25c which are positioned between the projections 23a-23c and differently from a solder material, the recesses 25a-25d are filled by the metal region 15 comprised of a metal of which the fusion point is higher than that of the solder material, and the mounting plane 11a is reconfigured into roughness smaller than roughness comprised of the projections 23a-23c and the recesses 25a-25d. Therefore, an effective contact area between a mounting plane of the device and the surface 11a of the heat sink 11 can be made closer to an area of the mounting plane of the device.;COPYRIGHT: (C)2013,JPO&INPIT
机译:解决的问题:提供一种散热器,该散热器能够使金属/金刚石复合物呈现接近其原始导热率的导热率。解决方案:散热器11包括用于在其上安装设备的安装平面11a并包括金属区域如图15所示,其设置在基部13的主表面13a上。主表面13a包括由金刚石颗粒17形成的突起23a-23c和位于突起23a-23c之间并且不同于焊料的凹部25a-25c。凹部25a至25d被由熔点高于焊料的金属的金属构成的金属区域15填充,并且安装平面11a被重新构造为小于由突起23a至23c和凸部23a构成的粗糙度。凹槽25a-25d。因此,可以使装置的安装平面与散热器11的表面11a之间的有效接触区域更靠近装置的安装平面的区域。;版权所有:(C)2013,JPO&INPIT

著录项

  • 公开/公告号JP2013098491A

    专利类型

  • 公开/公告日2013-05-20

    原文格式PDF

  • 申请/专利权人 SUMITOMO ELECTRIC IND LTD;

    申请/专利号JP20110242603

  • 发明设计人 IKEGAMI TAKATOSHI;ADACHI MASAHIRO;

    申请日2011-11-04

  • 分类号H01L23/36;

  • 国家 JP

  • 入库时间 2022-08-21 17:00:17

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号