METHOD FOR FORMING MIMCAP STRUCTURE, AND MIMCAP STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a MIMCAP structure which comprises a high dielectric constant dielectric and does not cause further oxidization that forms detrimental interfacial layers.;SOLUTION: An electronic device includes a first electrode, and a layer of a dielectric material including titanium oxide and a first dopant ion. The layer of the dielectric material is formed on the first electrode. The first dopant ion has a size mismatch of 10% or lower compared to the Ti⁴⁺ ion, and the dielectric material has a rutile tetragonal crystalline structure at temperatures below 650°C. The electronic device further includes a second electrode, formed upon the dielectric material layer.;COPYRIGHT: (C)2013,JPO&INPIT