The ferroelectric thin film which was formed the constituent for ferroelectric thin film formation, by the formation manner and the said manner of the ferroelectric thin film

摘要

PPROBLEM TO BE SOLVED: To provide a composition for ferroelectric thin film formation that can improve relative permittivity much more than a conventional ferroelectric thin film by a simple method and is suitable for use in a thin film capacitor with high capacity density, a method for ferroelectric thin film formation, and a ferroelectric thin film formed by the method. PSOLUTION: The composition for ferroelectric thin film formation is used in the formation of the ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide A represented by general formula (PbSBx/SBLaSBy/SB)(ZrSBz/SBTiSB(1-z)/SB)OSB3/SB(wherein 0.9x1.3, 0≤y0.1, and 0≤z0.9 are satisfied) with a composite oxide B containing Nd, and consists of an organic metal compound solution having the respective raw materials dissolved in an organic solvent at rates for imparting the metal atom ratio shown by the general formula such that the mol ratio B/A of B and A satisfies 0.005≤B/A0.03. PCOPYRIGHT: (C)2010,JPO&INPIT