How to use it hafnium-containing precursor and as well as zirconium-containing precursor

摘要

, Discloses a method for providing the hafnium-containing precursor and as well as zirconium-containing precursor. Precursor was disclosure includes the at least one aliphatic group as a substituent which is selected to have a high flexibility and ligand, than conventional substituents. The precursor as disclosed, can be used with the atomic layer deposition or chemical vapor deposition, for example vapor deposition method, to deposit the layer containing zirconium or hafnium. [Selection] Figure Figure 1