CHEMICAL AMPLIFICATION TYPE RESIST COMPOSITION, RESIST FILM USING THE SAME, RESIST APPLICATION MASK BLANK, RESIST PATTERN FORMATION METHOD, AND PHOTOMASK

摘要

PROBLEM TO BE SOLVED: To provide a chemical amplification type resist composition capable of forming a pattern which simultaneously satisfies high sensitivity, high resolution (for example, high resolution, excellent pattern shape, less edge roughness(LER)), and successful dry etching resistance, a resist film, a resist application mask blank using the same, a resist pattern formation method, and a photomask.;SOLUTION: The chemical amplification type resist composition contains: (A) a cyclic compound which is expressed by the following general formula (1); and (B) a compound which produces acid by irradiation of active rays or radiation. However, the cyclic compound (A) and the compound (B) which produces acid by the irradiation of the active rays or the radiation may be the same compound. In the general formula (1), L represents a single bond or divalent connection group. R₁ represents a substituent group or a hydrogen atom. R' represents a polycyclic aliphatic group, m represents integers of 1-4, and n represents integers of 3-8.;COPYRIGHT: (C)2013,JPO&INPIT