And a method of manufacturing the AlGaAs-based light-emitting diode with a double heterojunction

摘要

Peak wave length of radiation above 880nm, AlG whose responsiveness is fast, possesses double heterojunctionThe aAs light-emitting diode is offered. The P type clad layer the AlGaAs chemical compound of 1 which consists of the AlGaAs chemical compound of P type and P typeAnd others luminous layer of the P type which becomes and N type the N type clad layer 3 where consists of the AlGaAs chemical compound of 2 it is littleAlso the ku in LED which possesses 3 layer, it adds with Si and Ge in aforementioned luminous layer 2 as a dopant.