首页> 外国专利> Method for reducing pattern collapse in high aspect ratio nanostructures

Method for reducing pattern collapse in high aspect ratio nanostructures

机译:减少高深宽比纳米结构中图案塌陷的方法

摘要

A method is provided for treating the surface of high aspect ratio nanostructures to help protect the delicate nanostructures during some of the rigorous processing involved in fabrication of semiconductor devices. A wafer containing high aspect ratio nanostructures is treated to make the surfaces of the nanostructures more hydrophobic. The treatment may include the application of a primer that chemically alters the surfaces of the nanostructures preventing them from getting damaged during subsequent wet clean processes. The wafer may then be further processed, for example a wet cleaning process followed by a drying process. The increased hydrophobicity of the nanostructures helps to reduce or prevent collapse of the nanostructures.
机译:提供了一种用于处理高深宽比纳米结构的表面的方法,以在半导体器件制造中涉及的一些严格处理过程中帮助保护脆弱的纳米结构。处理包含高纵横比纳米结构的晶片以使纳米结构的表面更疏水。该处理可以包括施加底漆,该底漆化学改变纳米结构的表面,以防止它们在随后的湿法清洁过程中受损。然后可以进一步处理晶片,例如湿法清洁工艺,然后是干燥工艺。纳米结构的增加的疏水性有助于减少或防止纳米​​结构的塌陷。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号