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Pattern Collapse of High-Aspect-Ratio Silicon Nanostructures - A Parametric Study

机译:高纵横比硅纳米结构的图案塌陷-参数研究

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摘要

This work focuses on capillary-induced collapse of high-aspect-ratio silicon nanopillars. Modification of the surface chemistry is demonstrated to be an efficient approach for reducing capillary forces and consequently reduce pattern collapse. Special effort is spent on determination of the wetting state of chemically modified surfaces as complete structure wetting is of utmost importance in wet processing. In light of this, an ATR-FTIR based method has been developed to unambiguously distinguish between wetting and non-wetting states.
机译:这项工作的重点是毛细管引起的高纵横比的硅纳米柱塌陷。事实证明,改变表面化学性质是减少毛细作用力并因此减少图案塌陷的有效方法。由于在湿法加工中,完整的结构润湿极为重要,因此需要花费特别的精力来确定化学改性表面的润湿状态。鉴于此,已经开发了基于ATR-FTIR的方法来明确地区分润湿状态和非润湿状态。

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