Half-tone type EUV mask, a method for producing half-tone type EUV mask, half-tone type EUV mask blank and pattern transfer method

摘要

PPROBLEM TO BE SOLVED: To provide a halftone type EUV (Extreme Ultra Violet) mask, a halftone type EUV mask manufacturing method, a halftone type EUV mask blank and a pattern transfer method simultaneously attaining wide selectiveness (high degree of freedom) of reflectance and high resistance to cleaning solvent with a relatively thin thickness and selecting the material and the structure of an easy-to-etch halftone film. PSOLUTION: The halftone type EUV mask includes a substrate, a high reflection part formed on the substrate and a low reflection part formed on the substrate and patterned. The low reflection part is a laminate of a Ta (tantalum) containing first layer and an Ru (ruthenium) containing second layer. PCOPYRIGHT: (C)2010,JPO&INPIT