Production manner, and flat display null substrate of polycrystal silicon formations and polycrystal

摘要

PROBLEM TO BE SOLVED: To provide a polycrystalline silicon layer that is uniform in the size of a crystal particle and distribution in a crystal grain boundary and can obtain improved characteristics when forming a thin-film transistor, to provide a manufacturing method of the polycrystalline silicon layer, and to provide a plane display.;SOLUTION: The manufacturing method of polycrystalline silicon layers comprises a stage for forming an amorphous silicon layer 120 on a substrate; a stage for forming a first pattern layer 130 so that a prescribed region of the amorphous silicon layer 120 is exposed; a stage for forming a second pattern layer 140; a stage for forming a metal catalyst layer 150 on the second pattern layer 140; and a stage for diffusing a metal catalyst to a prescribed region on the amorphous silicon layer for forming a seed by heat-treating the substrate, allowing the seed to crystallize a prescribed region of the amorphous silicon layer 120 into a seed region 170 having at least 3.5 μm or larger width, growing crystallinity in the seed region 170, and crystallizing the amorphous silicon layer 120 into a crystallization region 190.;COPYRIGHT: (C)2007,JPO&INPIT