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Transformation of Electrical Activity of Extended Defects in Silicon Polycrystals under Annealing and Hydrogen Plasma Treatment

机译：退火和氢等离子体处理下多晶硅中扩展缺陷电活动的转变

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Fedotov Drozdov Yu;
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年度 2007
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1. Transmission electron microscopy study of hydrogen defect formation at extended defects in hydrogen plasma treated multicrystalline silicon [J] . Heidi Nordmark, Ri Holmestad, John C. Walmsley, Journal of Applied Physics . 2009,第3期

机译：氢等离子体处理的多晶硅中扩展缺陷处氢缺陷形成的透射电镜研究
2. Transmission Electron Microscopy Study Of Hydrogen Defect Formation At Extended Defects In Hydrogen Plasma Treated Multicrystalline Silicon [J] . Heidi Nordmark, Randi Holmestad, John C. Walmsley, Journal of Applied Physics . 2009,第3期

机译：氢等离子体处理的多晶硅中扩展缺陷处氢缺陷形成的透射电镜研究
3. Hydrogen gettering at buried defect layers in ion-implanted silicon by plasma hydrogenation and annealing [J] . A.G. Ulyashin, J.S. Christensen, B.G. Svensson, Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2006,第1a2期

机译：通过等离子体氢化和退火在离子注入硅中的掩埋缺陷层处吸氢
4. Evolution of hydrogen related defects in plasma hydrogenated crystalline silicon under thermal and laser annealing [C] . Y. Ma, Y. L. Huang, R. Job, International Meeting on Gettering and Defect Engineering in Semiconductor Technology . 2006

机译：热和激光退火下等离子体氢化结晶硅中氢相关缺陷的演变
5. Electrical and optical characterization of intrinsic and ion-implantation induced defects in 6-hydrogen-silicon carbide and 4-hydrogen-silicon carbide. [D] . Scott, Michael Buryl. 1999

机译：6氢碳化硅和4氢碳化硅中本征和离子注入引起的缺陷的电学和光学表征。
6. Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix [O] . Shigeru Yamada, Yasuyoshi Kurokawa, Shinsuke Miyajima, 2014

机译：氢等离子体处理非晶碳化硅基体减少硅量子点超晶格结构缺陷的研究
7. Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix [O] . Shigeru Yamada, Yasuyoshi Kurokawa, Shinsuke Miyajima, 2014

机译：氢等离子体处理用非晶碳化硅基体减少硅量子点超晶格结构缺陷的研究
8. Hydrogen Annealing of P/sub b/ and E' Defect Centers in Oxidized Silicon Wafers [R] . Li, Z. , Fonash, S. J. , Caplan, P. J. , 1987

机译：氧化硅片中p / sub b /和E'缺陷中心的氢退火

Transformation of Electrical Activity of Extended Defects in Silicon Polycrystals under Annealing and Hydrogen Plasma Treatment

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