首页> 外国专利> Strain-Compensating Fill Patterns for Controlling Semiconductor Chip Package Interactions

Strain-Compensating Fill Patterns for Controlling Semiconductor Chip Package Interactions

机译:应变补偿填充图案,用于控制半导体芯片封装的相互作用

摘要

Generally, the subject matter disclosed herein relates to sophisticated semiconductor chips that may be less susceptible to the occurrence of white bumps during semiconductor chip packaging operations, such as flip-chip or 3D-chip assembly, and the like. One illustrative semiconductor chip disclosed herein includes, among other things, a bond pad and a metallization layer below the bond pad, wherein the metallization layer is made up of a bond pad area below the bond pad and a field area surrounding the bond pad area. Additionally, the semiconductor device also includes a plurality of device features in the metallization layer, wherein the plurality of device features has a first feature density in the bond pad area and a second feature density in the field area that is less than the first feature density.
机译:通常,本文公开的主题涉及复杂的半导体芯片,其在诸如倒装芯片或3D芯片组件等的半导体芯片封装操作期间可能不易出现白色凸点。本文公开的一种示例性半导体芯片尤其包括键合焊盘和在键合焊盘下方的金属化层,其中,金属化层由键合焊盘下方的键合焊盘区域和围绕键合焊盘区域的场区域组成。另外,半导体器件在金属化层中还包括多个器件特征,其中,多个器件特征在键合焊盘区域中具有第一特征密度,并且在场区域中具有小于第一特征密度的第二特征密度。 。

著录项

  • 公开/公告号US2013062775A1

    专利类型

  • 公开/公告日2013-03-14

    原文格式PDF

  • 申请/专利权人 VIVIAN W. RYAN;

    申请/专利号US201113230457

  • 发明设计人 VIVIAN W. RYAN;

    申请日2011-09-12

  • 分类号H01L23/48;H01L23/498;

  • 国家 US

  • 入库时间 2022-08-21 16:52:02

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