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Strain-compensating fill patterns for controlling semiconductor chip package interactions
Strain-compensating fill patterns for controlling semiconductor chip package interactions
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机译:应变补偿填充图案,用于控制半导体芯片封装的相互作用
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摘要
Generally, the subject matter disclosed herein relates to sophisticated semiconductor chips that may be less susceptible to the occurrence of white bumps during semiconductor chip packaging operations, such as flip-chip or 3D-chip assembly, and the like. One illustrative semiconductor chip disclosed herein includes, among other things, a bond pad and a metallization layer below the bond pad, wherein the metallization layer is made up of a bond pad area below the bond pad and a field area surrounding the bond pad area. Additionally, the semiconductor device also includes a plurality of device features in the metallization layer, wherein the plurality of device features has a first feature density in the bond pad area and a second feature density in the field area that is less than the first feature density.
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