首页> 外国专利> DAMASCENE PROCESS FOR ALIGNING AND BONDING THROUGH-SILICON-VIA BASED 3D INTEGRATED CIRCUIT STACKS

DAMASCENE PROCESS FOR ALIGNING AND BONDING THROUGH-SILICON-VIA BASED 3D INTEGRATED CIRCUIT STACKS

机译:通过硅-VIA对3D集成电路堆栈进行对齐和绑定的DAMASCENE过程

摘要

Through-silicon-via (TSV) based 3D integrated circuit (3D IC) stacks are aligned, bonded and electrically interconnected using a transparent alignment material in the TSVs until the wafers are bonded. Embodiments include providing a first wafer having a first device layer and at least one first TSV filled with a conductive material, providing a second wafer having a second device layer, forming at least one second TSV in the second wafer, filling each second TSV with an alignment material, thinning the second wafer until the transparent material extends all the way through the wafer, aligning the first and second wafers, bonding the first and second wafers, removing the alignment material from the second wafer, and filling each second TSV in the second wafer with a conductive material.
机译:使用硅通孔(TSV)中的透明对准材料对基于硅通孔(TSV)的3D集成电路(3D IC)堆栈进行对准,键合和电互连,直到键合晶片为止。实施例包括提供具有第一器件层和填充有导电材料的至少一个第一TSV的第一晶片,提供具有第二器件层的第二晶片,在第二晶片中形成至少一个第二TSV,并向每个第二TSV填充硅。对准材料,减薄第二晶片,直到透明材料一直贯穿整个晶片,对准第一和第二晶片,粘结第一和第二晶片,从第二晶片上去除对准材料,并在第二晶片中填充每个第二TSV晶片与导电材料。

著录项

  • 公开/公告号US2013069232A1

    专利类型

  • 公开/公告日2013-03-21

    原文格式PDF

  • 申请/专利权人 HONG YU;HUANG LIU;

    申请/专利号US201113234405

  • 发明设计人 HONG YU;HUANG LIU;

    申请日2011-09-16

  • 分类号H01L23/522;H01L21/60;

  • 国家 US

  • 入库时间 2022-08-21 16:51:02

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