首页> 外国专利> SPUTTERING TARGET, SEMICONDUCTING COMPOUND FILM, SOLAR CELL COMPRISING SEMICONDUCTING COMPOUND FILM, AND METHOD OF PRODUCING SEMICONDUCTING COMPOUND FILM

SPUTTERING TARGET, SEMICONDUCTING COMPOUND FILM, SOLAR CELL COMPRISING SEMICONDUCTING COMPOUND FILM, AND METHOD OF PRODUCING SEMICONDUCTING COMPOUND FILM

机译:溅射靶,半导电复合膜,包含半导电复合膜的太阳能电池以及制造半导电复合膜的方法

摘要

The present invention provides a sputtering target which comprises an alkali metal, a Ib group element, a IIIb group element, and a VIb group element, and has a chalcopyrite crystal structure. Provided is a sputtering target comprising Ib-IIIb-VIb group elements and having a chalcopyrite crystal structure, which is suitable for producing, via a single sputtering process, a light-absorbing layer comprising the Ib-IIIb-VIb group elements and having the chalcopyrite crystal structure.
机译:本发明提供一种溅射靶,其包括碱金属,Ib族元素,IIIb族元素和VIb族元素,并且具有黄铜矿晶体结构。提供一种包含Ib-IIIb-VIb族元素并具有黄铜矿晶体结构的溅射靶,其适合于通过单次溅射工艺来制造包含Ib-IIIb-VIb族元素并具有黄铜矿的光吸收层。晶体结构。

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