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Fin Structures with Damage-Free Sidewalls for Multi-Gate Mosfets
Fin Structures with Damage-Free Sidewalls for Multi-Gate Mosfets
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机译:多门Mosfet的无损侧壁鳍结构
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摘要
Improved Fin Field Effect Transistors (FinFET) are provided, as well as improved techniques for forming fins for a FinFET. A fin for a FinFET is formed by forming a semi-insulating layer on an insulator that gives a sufficiently large conduction band offset (ΔEe) ranging from 0.05-0.6 eV; patterning an epitaxy mask on the semi-insulating layer, wherein the epitaxy mask has a reverse image of a desired pattern of the fin; performing a selective epitaxial growth within the epitaxy mask; and removing the epitaxy mask such that the fin remains on the semi-insulating layer. The semi-insulating layer comprises, for example, a III-V semiconductor material and optionally further comprises a Si δ-doping layer to supply electron carriers to the III-V channel.
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机译:提供了改进的鳍式场效应晶体管(FinFET),以及用于形成FinFET的鳍片的改进技术。 FinFET的鳍片是通过在绝缘体上形成一个半绝缘层而形成的,该绝缘层具有足够大的导带偏移(ΔE e Sub>),范围为0.05-0.6 eV;在半绝缘层上构图外延掩模,其中外延掩模具有鳍的期望图案的反像;在外延掩模内进行选择性外延生长;去除外延掩模,以使鳍片保留在半绝缘层上。半绝缘层包括例如III-V族半导体材料,并且可选地还包括Siδ掺杂层,以将电子载流子提供给III-V沟道。
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