首页> 外国专利> INTEGRATED CIRCUIT HAVING A CHARGED-DEVICE MODEL ELECTROSTATIC DISCHARGE PROTECTION MECHANISM

INTEGRATED CIRCUIT HAVING A CHARGED-DEVICE MODEL ELECTROSTATIC DISCHARGE PROTECTION MECHANISM

机译:具有带电装置模型的静电放电保护机制的集成电路

摘要

An integrated circuit having charged-device model (CDM) electrostatic discharge (ESD) protection includes an I/O circuit, at least one CDM ESD protection device, and at least one internal circuit. The integrated circuit further includes at least one TSV (Through Silicon Via) each being coupled between a ground of at least one ground of the input/output circuit and one of the at least one ESD protection device, wherein each of the at least one ESD protection device is coupled between one of the at least one TSV and a ground of one of the at least one internal circuit.
机译:一种具有充电设备模型(CDM)静电放电(ESD)保护的集成电路,包括一个I / O电路,至少一个CDM ESD保护设备和至少一个内部电路。该集成电路还包括至少一个TSV(直通硅通孔),每个TSV被耦合在输入/输出电路的至少一个接地的接地与至少一个ESD保护器件之一之间,其中,至少一个ESD中的每一个保护装置耦合在至少一个TSV之一与至少一个内部电路之一的地之间。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号