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Combined Substrate High-K Metal Gate Device and Oxide-Polysilicon Gate Device, and Process of Fabricating Same
Combined Substrate High-K Metal Gate Device and Oxide-Polysilicon Gate Device, and Process of Fabricating Same
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机译:衬底高K金属栅器件和氧化物-多晶硅栅器件的组合及其制造工艺
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摘要
A semiconductor structure having combined substrate high-K metal gate device and an oxide-polysilicon gate device and a process of fabricating same are provided. The semiconductor structure enables mixed low power/low voltage and high power/high voltage applications to be supported on the same chip.
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