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Structure for High-Speed Signal Integrity in Semiconductor Package with Single-Metal-Layer Substrate
Structure for High-Speed Signal Integrity in Semiconductor Package with Single-Metal-Layer Substrate
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机译:具有单金属层基板的半导体封装中的高速信号完整性结构
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摘要
A semiconductor chip (101) with bond pads (110) on a substrate (103) with rows and columns of regularly pitched metal contact pads (131). A zone comprises a first pair (131a, 131b) and a parallel second pair (131c, 131d) of contact pads, and a single contact pad (131e) for ground potential; staggered pairs of stitch pads (133) connected to respective pairs of adjacent contact pads by parallel and equal-length traces (132a, 132b, etc.). Parallel and equal-length bonding wires (120a, 120b, etc.) connect bond pad pairs to stitch pad pairs, forming differential pairs of parallel and equal-length conductor lines. Two differential pairs in parallel and symmetrical position form a transmitter/receiver cell for conducting high-frequency signals.
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机译:一种半导体芯片( 101 B>),其在基板( 103 B>)上具有键合焊盘( 110 B>),该焊盘具有成排和成列的规则间距的金属接触焊盘( 131 B>)。一个区域包括第一对( 131 B> a, I> 131 B> b I>)和平行的第二对( 131 B> c, I> 131 B> d I>)和一个接触垫( 131 B> < I> e I>)的地电位;通过平行且等长的迹线( 132 B> a, I> 133 B>)连接到相应的相邻接触焊盘对> 132 B> b I>等)。平行且等长的焊线( 120 B> a, I> 120 B> b I>等)将焊点对与针脚对,形成平行和等长导线的差分对。平行和对称位置的两个差分对构成一个发射/接收单元,用于传导高频信号。
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