首页> 外国专利> CHIP WITH INTEGRATED CIRCUIT AND MICRO-SILICON CONDENSER MICROPHONE INTEGRATED ON SINGLE SUBSTRATE AND METHOD FOR MAKING THE SAME

CHIP WITH INTEGRATED CIRCUIT AND MICRO-SILICON CONDENSER MICROPHONE INTEGRATED ON SINGLE SUBSTRATE AND METHOD FOR MAKING THE SAME

机译:集成有电路和微硅冷凝器的单芯片芯片及其制造方法

摘要

A method for integrating an IC and a MEMS component includes the following steps: S1) providing a SOI base (20) having a first area (21) and a second area (22); S2) fabricating an IC on the first area through a standard semiconductor process, and simultaneously forming a metal conductive layer (26) and a medium insulation layer (25c) extending to the second area; S3) partly removing the medium insulation layer and then further partly removing the silicon component layer so as to form a backplate diagram; S4) depositing a sacrificial layer (32) above the SOI base; S5) forming a Poly Sil-xGex film (33) on the sacrificial layer; S6) forming a back cavity (34); and S7) eroding the sacrificial layer to form a chamber (36) in communication with the back cavity. Besides, a chip (10) fabricated by the above method is also disclosed.
机译:用于集成IC和MEMS组件的方法包括以下步骤:S1)提供具有第一区域( 21 )和第二区域(SOI)的SOI基础( 20 22 ); S2)通过标准半导体工艺在第一区域上制造IC,并同时形成金属导电层( 26 )和介质绝缘层( 25 c )扩展到第二个区域; S3)先去除介质绝缘层,再去除硅组分层,形成背板图; S4)在SOI基极上方沉积牺牲层( 32 ); S5)在牺牲层上形成Poly Sil-xGex膜( 33 ); S6)形成后腔( 34 ); S7)腐蚀牺牲层以形成与后腔连通的腔室( 36 )。此外,还公开了通过上述方法制造的芯片( 10 )。

著录项

  • 公开/公告号US2013202136A1

    专利类型

  • 公开/公告日2013-08-08

    原文格式PDF

  • 申请/专利权人 WEI HU;GANG LI;JIA-XIN MEI;

    申请/专利号US201213561194

  • 发明设计人 JIA-XIN MEI;WEI HU;GANG LI;

    申请日2012-07-30

  • 分类号H04R1/00;H01L21/02;

  • 国家 US

  • 入库时间 2022-08-21 16:47:58

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