IN-SITU SIN GROWTH TO ENABLE SCHOTTKY CONTACT FOR GAN DEVICES

摘要

A method of fabricating a diode in gallium nitride (GaN) materials includes providing a n-type GaN substrate having a first surface and a second surface and forming a n-type GaN drift layer coupled to the first surface of the n-type GaN substrate. The method also includes forming an in-situ Si_xN_y layer coupled to the n-type GaN drift layer opposite the n-type GaN substrate and at least partially removing portions of the Si_xN_y layer and the n-type GaN drift layer to form a plurality of void regions and a remaining portion of the Si_xN_y layer. The method further includes selectively regrowing a p-type epitaxial layer in the void regions.