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2DEG Schottky diode formed in nitride material with a composite Schottky/ohmic electrode structure and method of making the same
2DEG Schottky diode formed in nitride material with a composite Schottky/ohmic electrode structure and method of making the same
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机译:由具有复合肖特基/欧姆电极结构的氮化物材料形成的2DEG肖特基二极管及其制造方法
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摘要
Disclosed is a semiconductor device including: a base substrate; a semiconductor layer disposed on the base substrate; an ohmic electrode part which has ohmic electrode lines disposed in a first direction, on the semiconductor layer; and a Schottky electrode part which is disposed to be spaced apart from the ohmic electrode lines on the semiconductor layer and includes Schottky electrode lines disposed in the first direction, wherein the Schottky electrode lines and the ohmic electrode lines are alternately disposed in parallel, and the ohmic electrode part further includes first ohmic electrodes covered by the Schottky electrode lines on the semiconductor layer.
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