Slurry composition for chemical-mechanical polishing and method of chemical-mechanical polishing with the same

摘要

Provided may be a slurry composition for chemical mechanical polishing (CMP) and a CMP method using the same. For example, the slurry composition may include a first polishing inhibitor including at least one of PO₄³⁻ or HPO₄²⁻ and a second polishing inhibitor, which may be a C₂-C₁₀ hydrocarbon compound having —SO₃H or —OSO₃H. By using the slurry composition for CMP and a CMP method using the same, increased selectivity to SiN may be obtained.