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Field effect transistor with electric field and space-charge control contact
Field effect transistor with electric field and space-charge control contact
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机译:具有电场和空间电荷控制触点的场效应晶体管
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摘要
A group III nitride-based transistor capable of achieving terahertz-range cutoff and maximum frequencies of operation at relatively high drain voltages is provided. In an embodiment, two additional independently biased electrodes are used to control the electric field and space-charge close to the gate edges.
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