首页> 外国专利> A method for reducing the electrical contact resistance in organic field effect transistors - by embedding of nanoparticles for the production of the field peaks at the interface between the contact material and the organic semiconductor material

A method for reducing the electrical contact resistance in organic field effect transistors - by embedding of nanoparticles for the production of the field peaks at the interface between the contact material and the organic semiconductor material

机译:一种用于降低有机场效应晶体管中电接触电阻的方法-通过在接触材料和有机半导体材料之间的界面处嵌入纳米粒子以产生场峰值

摘要

The present invention relates to a method of manufacturing semiconductor devices based on organic semiconductor materials, in which an electric contact resistance between a first body (1) and a second body (2), of which one of an organic semiconductor material and the other of a contact material is made possible, by embedding of nanoparticles (4) on a contact surface (3) between the two bodies is minimized.
机译:本发明涉及一种基于有机半导体材料的半导体器件的制造方法,其中第一主体(1)和第二主体(2)之间的电接触电阻为有机半导体材料中的一种,而另一种为有机半导体材料。通过使纳米颗粒(4)在两个主体之间的接触表面(3)上的嵌入最小化,使得接触材料成为可能。

著录项

  • 公开/公告号DE10153562A1

    专利类型

  • 公开/公告日2003-05-15

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG DE;

    申请/专利号DE2001153562

  • 发明设计人 KLAUK HAGEN DE;SCHMID GUENTER DE;

    申请日2001-10-30

  • 分类号H01L51/40;

  • 国家 DE

  • 入库时间 2022-08-21 23:42:30

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号