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A method for reducing the electrical contact resistance in organic field effect transistors - by embedding of nanoparticles for the production of the field peaks at the interface between the contact material and the organic semiconductor material
A method for reducing the electrical contact resistance in organic field effect transistors - by embedding of nanoparticles for the production of the field peaks at the interface between the contact material and the organic semiconductor material
The present invention relates to a method of manufacturing semiconductor devices based on organic semiconductor materials, in which an electric contact resistance between a first body (1) and a second body (2), of which one of an organic semiconductor material and the other of a contact material is made possible, by embedding of nanoparticles (4) on a contact surface (3) between the two bodies is minimized.
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