Guided diameter SiC sublimation growth with multi-layer growth guide

摘要

In the growth of a SiC boule, a growth guide is provided inside of a growth crucible that is charged with SiC source material at a bottom of the crucible and a SiC seed crystal at a top of the crucible. The growth guide has an inner layer that defines at least part of an opening in the growth guide and an outer layer that supports the inner layer in the crucible. The opening faces the source material with the seed crystal positioned at an end of the opening opposite the source material. The inner layer is formed from a first material having a higher thermal conductivity than the second, different material forming the outer layer. The source material is sublimation grown on the seed crystal in the growth crucible via the opening in the growth guide to thereby form the SiC boule on the seed crystal.