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Transistor using derivative polymethyl-methacrylate thin film as gate insulator and passivation layer, and fabrication method thereof
Transistor using derivative polymethyl-methacrylate thin film as gate insulator and passivation layer, and fabrication method thereof
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机译:使用衍生的聚甲基丙烯酸甲酯薄膜作为栅绝缘体和钝化层的晶体管及其制造方法
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摘要
Disclosed are a transistor including a gate insulation layer and an organic passivation layer of a polymer thin film, and a fabrication method thereof. The transistor comprises a substrate, a gate electrode formed on the substrate, a gate insulation layer including a polymethacrylic acid thin film, formed on the gate electrode and the substrate, a channel layer formed on the gate insulation layer, source electrode and drain electrode formed on the channel layer so as to expose at least a part of the channel layer, and an organic passivation layer including a polymethacrylic acid thin film, formed on the source electrode, drain electrode and the partially exposed channel layer. The method for fabricating a transistor comprises steps of forming a gate electrode on a substrate, forming a gate insulation layer of a polymethacrylic acid thin film on the gate electrode and the substrate, forming a channel layer on the gate insulation layer, forming source electrode and drain electrode on the channel layer so as to expose at least a part of the channel layer, and forming an organic passivation layer of a polymethacrylic acid thin film on the source electrode, drain electrode and the partially exposed channel layer.
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