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Method to reduce contact resistance of N-channel transistors by using a III-V semiconductor interlayer in source and drain
Method to reduce contact resistance of N-channel transistors by using a III-V semiconductor interlayer in source and drain
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机译:通过在源极和漏极中使用III-V半导体中间层来降低N沟道晶体管的接触电阻的方法
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摘要
A method to reduce contact resistance of n-channel transistors by using a III-V semiconductor interlayer in source and drain is generally presented. In this regard, a device is introduced comprising an n-type transistor with a source region and a drain region a first interlayer dielectric layer adjacent the transistor, a trench through the first interlayer dielectric layer to the source region, and a conductive source contact in the trench, the source contact being separated from the source region by a III-V semiconductor interlayer. Other embodiments are also disclosed and claimed.
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