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A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION HAVING A pH VALUE OF 3.0 TO 5.5
A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION HAVING A pH VALUE OF 3.0 TO 5.5
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机译：具有pH值的CMP组成的含锗元素和/或Si 1-X Ge X 材料的化学机械抛光的半导体器件的制造工艺值3.0至5.5
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摘要
A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material with 0.1 ≤ x 1 in the presence of a chemical mechanical polishing (CMP) composition having a pH value in the range of from 3.0 to 5.5 and comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of an oxidizing agent, and (C) an aqueous medium.
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机译：一种制造半导体器件的方法，包括在存在以下元素的情况下，对元素锗和/或0.1≤x <1的Si 1-x Ge x 材料进行化学机械抛光。化学机械抛光（CMP）组合物，其pH值在3.0到5.5范围内，并且包含：（A）无机颗粒，有机颗粒或其混合物或复合物，（B）至少一种氧化剂（C）水性介质。
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